Computer analysis of punch-through in MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
2. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
3. Computer aided analysis of insulated gate field-effect transistors;Barron,1969
4. The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown
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1. Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
2. Modeling effects of electron-velocity overshoot in a MOSFET;IEEE Transactions on Electron Devices;1997-05
3. The dependence of the electron mobility on the longitudinal electric field in MOSFETs;Semiconductor Science and Technology;1997-03-01
4. Punchthrough currents in sub-micron short channel MOS transistors;Solid-State Electronics;1997-03
5. Numerical modeling of silicon quantum dots;Superlattices and Microstructures;1996-10
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