A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
2. A quantum well δ-doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition
3. The δ-Doped Field-Effect Transistor
4. Selectively δ‐doped quantum well transistor grown by gas‐source molecular‐beam epitaxy
5. Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
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1. Investigation of a graded channel InGaAs/GaAs heterostructure transistor;Superlattices and Microstructures;2000-07
2. The study of δ-doping resonant interband tunneling diode;Materials Science and Engineering: B;1995-12
3. Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor;Applied Physics Letters;1995-05-22
4. Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing;Solid-State Electronics;1995-02
5. Si delta-doped GaAs and AlGaAs by low-pressure MOVPE;Materials Science and Engineering: B;1994-12
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