Hot electron injection in millimetre wave Gunn diodes

Author:

Couch N.R.,Kelly M.J.,Spooner H.,Kerr T.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. The use of n+ spike doping regions as non-equilibrium connectors;Beton;Electronics Letters,1988

2. The use of linearly graded composition AlGaAs injectors for intervalley transfer in GaAs: theory and experiment;Couch;Solid State Electronics,1988

3. Current transport in metal-semiconductor barriers;Crowell;Solid State Electronics,1966

4. The effect of a high energy injection in the performance of mm wave Gunn oscillators;Greenwald;Solid State Electronics,1988

5. Advances in hot electron injector Gunn diodes;Spooner;GEC Journal of Research,1989

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1. Power-frequency performance of step-graded double Gunn diodes;Journal of Physics: Conference Series;2023-07-01

2. Analysis of notch-δ-doped GaAs-based Gunn diodes;Journal of Physics D: Applied Physics;2022-07-06

3. Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance;Physical Review B;2021-06-28

4. Numerical study of magnetic field effect on graphene based IMPATT source;Superlattices and Microstructures;2020-01

5. On increasing power of short InGaPAs graded-gap Gunn diodes;Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”;2019

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