AlAs and InAs mode LO phonon emission assisted tunneling in (InGa)As/(AlIn)As double barrier structures-Reference-Cited by-同舟云学术

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AlAs and InAs mode LO phonon emission assisted tunneling in (InGa)As/(AlIn)As double barrier structures

Published:1989-12 Issue:12 Volume:32 Page:1191-1195
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Celeste A.,Cury L.A.,Portal J.C.,Allovon M.,Maude D.K.,Eaves L.,Davies M.,Heath M.,Maldonado M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Effect of Atomic Force on the Surface Corrugation of 2H-NbSe2Observed by Scanning Tunneling Microscopy

2. Infrared Reflection Spectra ofGa1−xInxAs: A New Type of Mixed-Crystal Behavior

3. Two-dimensional magnetophonon resonance. II. GaInAs-AlInAs heterojunctions

4. Chevoir F. and B. Vinter, (1989), submitted to A.P.L.

5. Springer Series in Solid State Science;Chan,1988

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of new type resonances in triple barrier resonant tunneling diodes;Journal of Applied Physics;1997-09-15

2. Oscillatory and magneto-oscillatory structure of the tunnel current in double-barrier heterostructures;Solid State Communications;1995-04

3. Phonon-assisted tunneling from a two-dimensional emitter state;Physical Review B;1994-09-15

4. Coupling between in-plane and longitudinal motion in resonant tunnelling structures;Semiconductor Science and Technology;1993-10-01

5. Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures;Physical Review Letters;1993-09-13

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