Nonequilibrium electron dynamics in bipolar transistors-Reference-Cited by-同舟云学术

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Nonequilibrium electron dynamics in bipolar transistors

Published:1989-12 Issue:12 Volume:32 Page:1289-1295
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Levi A.F.J.,Nottenburg R.N.,Chen Y.K.,Beton P.H.,Panish M.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Influence of temperature on electron transport in bipolar devices

2. Extreme nonequilibrium electron transport in heterojunction bipolar transistors

3. High‐field transport in GaAs transistors

4. Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors

5. Subpicosecond InP/InGaAs heterostructure bipolar transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Study of Collector-Base Junction Design for Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;1996-02-28

2. Monte Carlo analysis of ultrahigh-speed InP/InGaAs HBTs;Microwave and Optical Technology Letters;1996-02-20

3. Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector;Simulation of Semiconductor Devices and Processes;1995

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