Thermal emission rates and capture cross sections of majority carriers at vanadium centers in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Determination of deep energy levels in Si by MOS techniques
2. Degeneracy Ratios and Impurity Levels of Vanadium inn-Type Silicon by Hall Measurement
3. Spin Resonance of Transition Metals in Silicon
4. Properties of Gold-Doped Silicon
5. Properties of gold in silicon
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2. Vanadium interactions in crystalline silicon;Physical Review B;2016-11-28
3. Charge Coupled Devices as Particle Detectors;Advances in High Energy Physics;2013
4. Correlation of electrical and optical properties of the vanadium-related C level in silicon;Physical Review B;1997-02-15
5. Effect of electric field on deep centers in Si?V studied by spectral analysis of capacitance transients;Applied Physics A Materials Science & Processing;1995-05
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