Cooperative effects between arsenic and boron in silicon during simultaneous diffusions from ion implanted and chemical source predepositions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Interactions in Sequential Diffusion Processes in Semiconductors
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Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interaction effects between arsenic and boron ions implanted in silicon during furnace annealing and RTA;Vacuum;1989-01
2. Shaping of Dopant Concentration Profiles in Silicon by Multiple–Pulse Laser Processing;MRS Proceedings;1981
3. Concentration Profiles of Diffused Dopants in Silicon;Impurity Doping Processes in Silicon;1981
4. Components of Chemical Reactions in Solids;Japanese Journal of Applied Physics;1980-10
5. Small-signal theory of the transistor transit-time oscillator (translator);Solid-State Electronics;1979-04
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