Effect of band structure on the voltage-current characteristics of metal-insulator-metal tunnel junctions-Reference-Cited by-同舟云学术

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Effect of band structure on the voltage-current characteristics of metal-insulator-metal tunnel junctions

Published:1972-07 Issue:7 Volume:15 Page:745-752
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sarnot S.L.,Dubey P.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference66 articles.

1. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film

2. Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film

3. Potential Barriers and Emission‐Limited Current Flow Between Closely Spaced Parallel Metal Electrodes

4. Volt-current characteristics for tunneling through insulating films

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions;IEEE Journal of Quantum Electronics;1983-04

2. Analytical expressions for tunnel currents in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures in a two-band model;Solid-State Electronics;1980-01

3. Microwave Applications of Diodes, Varactors and Tunnel Diodes;Semiconductor Devices and Integrated Electronics;1980

4. BIBLIOGRAPHY;Tunnelling and Negative Resistance Phenomena in Semiconductors;1977

5. Schottky emission in thin−film sandwich structures;Journal of Applied Physics;1975-01

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