Structure and electrical properties of Ge/Au ohmic contacts to n-type GaAs formed by rapid thermal annealing-Reference-Cited by-同舟云学术

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Structure and electrical properties of Ge/Au ohmic contacts to n-type GaAs formed by rapid thermal annealing

Published:1990-11 Issue:11 Volume:33 Page:1437-1446
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Crouch M.A.,Gill S.S.,Woodward J.,Courtney S.J.,Williams G.M.,Cullis A.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Improved ohmic properties of Au–Ge Contacts to thin n-GaAs layers alloyed with an SiO2 overlayer

2. Au–Ge Ohmic Contact to n-GaAs by IR Lamp Alloying

3. Metallurgical reactions in Au/(InGe) ohmic contacts to GaAs

4. Interfacial reactions between gold thin films and GaAs substrates

5. Metallurgy and Morphology of the Interface of AuGe Ohmic Contact to GaAs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications;IEEE Transactions on Electron Devices;2018-02

2. Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs;Materials Science in Semiconductor Processing;2015-02

3. Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics;Microelectronics Reliability;2011-08

4. Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers;Semiconductor Science and Technology;2008-01-25

5. Properties of Au-Ge ohmic contacts after the alloying process;Solid-State Electronics;1994-01

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