Metallurgical reactions in Au/(InGe) ohmic contacts to GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Metal-semiconductor contacts for GaAs bulk effect devices
2. Effect of Nonuniform Conductivity on the Behavior of Gunn Effect Samples
3. Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts
4. Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts
5. Investigation of the AuGeNi system used for alloyed contacts to GaAs
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1. Fundamental limits of electron and nuclear spin qubit lifetimes in an isolated self-assembled quantum dot;npj Quantum Information;2021-02-24
2. The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures;Journal of Materials Research;1999-04
3. Dictionary of Inorganic Compounds;Dictionary of Inorganic Compounds;1992
4. Structure and electrical properties of Ge/Au ohmic contacts to n-type GaAs formed by rapid thermal annealing;Solid-State Electronics;1990-11
5. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01
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