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Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation

  • Published:1987-02 Issue:2 Volume:30 Page:185-188
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Mogro-Campero A.,Love R.P.,Chang M.F.,Dyer R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suitability and Optimization of High-Voltage IGBTs for Series Connection With Active Voltage Clamping;IEEE Transactions on Power Electronics;2005-11

2. Irradiation-then-anneal processing to improve BSIT performance;IEEE Transactions on Electron Devices;1994-06

3. Using electron irradiation to control the turn-off time of static induction transistors;Semiconductor Science and Technology;1993-09-01

4. Effect of irradiation and annealing conditions on power transistor performance;IEE Proceedings G Circuits, Devices and Systems;1993

5. Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-05
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