Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference40 articles.
1. Picosecond InP optoelectronic switches
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4. Proton bombarded double heterostructure LED’s
5. Very efficient void formation in ion implanted InSb
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2. Investigation of proton damage in III-V semiconductors by optical spectroscopy;Journal of Applied Physics;2016-06-21
3. Profile of implanted in potassium titanyl phosphate by the , C nuclear reaction;Journal of Physics D: Applied Physics;1998-09-07
4. Investigation of radiation damage in germanium induced by MeV Si[sup +];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Damage behaviours in LiNbO3 crystals induced by MeV Au+ irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02
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