A new simple analytical emitter model for bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Simple general analytical solution to the minority carrier transport in heavily doped semiconductors
2. Measurements of bandgap narrowing in Si bipolar transistors
3. Comparison of band‐gap shrinkage observed in luminescence fromn+‐Si with that from transport and optical absorption measurements
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1. 2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates;Solid-State Electronics;2004-02
2. A simple formulation of the saturation current density in heavily doped emitters;Canadian Journal of Physics;2003-09-01
3. A New Solution for Minority-Carrier Injection into the Heavily Doped Emitter of Silicon Devices;physica status solidi (a);1999-02
4. Modelling of high-injection effects in bipolar devices;Microelectronics Journal;1997-01
5. Modeling and optimization of shallow and opaque heavily doped emitters for bipolar devices;IEEE Transactions on Electron Devices;1995-06
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