Emitter efficiency, transit times and current gain of bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Generalization of Moll–Ross relations for heterojunction bipolar transistors;Solid-State Electronics;2002-04
2. Optimum emitter parameters for maximum gain in uniformly doped NPN and PNP bipolar transistors;Solid-State Electronics;1992-12
3. Influence of majority carrier bandtails on the performance of semiconductor devices;Solid-State Electronics;1992-05
4. Switching properties of polysilicon emitter transistor operating in saturation;IEE Proceedings G Circuits, Devices and Systems;1991
5. Analytical solution for minority‐carrier transport in heavily doped semiconductors with position‐dependent band structures;Journal of Applied Physics;1990-08-15
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