Analytical solution for minority‐carrier transport in heavily doped semiconductors with position‐dependent band structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346626
Reference24 articles.
1. An analytic model for minority-carrier transport in heavily doped regions of silicon devices
2. The influence of heavy doping on the emitter efficiency of a bipolar transistor
3. Measuring and modeling minority carrier transport in heavily doped silicon
4. The emitter efficiency of bipolar transistors
5. Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon
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