A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors-Reference-Cited by-同舟云学术

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A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors

Published:1968-09 Issue:9 Volume:11 Page:821-826
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fulkerson D.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Theory of lateral transistors

2. J. Hatcher, 1967 International Electron Devices Meeting

3. Three-dimensional boundary-value problems in integrated circuits

4. Physical Theory of Transistors;Valdes,1961

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conformal mapping techniques for the analytical, two-dimensional calculation of currents in lateral bipolar transistor structures;Solid-State Electronics;1996-04

2. An improved analytical model for collector currents in lateral bipolar transistors;IEEE Transactions on Electron Devices;1994-03

3. A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures;Simulation of Semiconductor Devices and Processes;1993

4. Complete characterization of transport parameters in semiconductor substrates through lateral bipolar transistor measurements;Journal of Applied Physics;1992-09

5. Lateral transistor structure optimization with respect to current gain;Canadian Journal of Physics;1987-08-01

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