An improved analytical model for collector currents in lateral bipolar transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/6817/00275223.pdf?arnumber=275223
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Gain Gated Lateral Power Bipolar Junction Transistor;IEEE Electron Device Letters;2021-09
2. Ion-Sensitive Gated Bipolar Transistor;IEEE Transactions on Electron Devices;2019-10
3. Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair;Sensors;2015-12-23
4. Highly sensitive ion sensor based on the MOSFET–BJT hybrid mode of a gated lateral BJT;Sensors and Actuators B: Chemical;2013-05
5. A Low-Flicker Noise Gate-Controlled Lateral–Vertical Bipolar Junction Transistor Array With 55-nm CMOS Technology;IEEE Transactions on Electron Devices;2011-10
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