Spatiotemporal chaos in Gunn diodes in presence of impact ionization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Observation of Chaotic Behavior in an Electron-Hole Plasma in Ge
2. Critical Fluctuation near Threshold of Gunn Instability
3. Theoretical approaches to nonlinear and chaotic dynamics of generation-recombination processes in semiconductors
4. Chaotic current noise in a two-valley semiconductor system of the Gunn instability
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1. High Resolution Parameter-Space from a Two-Level Model on Semi-Insulating GaAs;International Journal of Bifurcation and Chaos;2015-02
2. SPATIO-TEMPORAL NONLINEAR DYNAMICS IN A SYSTEM OF ILLUMINATED AND DARK SEMICONDUCTORS;International Journal of Modern Physics B;2009-10-20
3. Statistical appearance of nonuniform fluctuations in a wide-gap n+–n−–n–n+ device;Solid State Communications;2006-08
4. Emergence of a multidomain regime and spatiotemporal chaos in Gunn diodes under impact ionization conditions;Physics Letters A;2001-03
5. Non-Periodic Current Oscillations in the Gunn-Effect Device with the Impact-Ionization Effect;Journal of the Physical Society of Japan;1995-05-15
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