Emergence of a multidomain regime and spatiotemporal chaos in Gunn diodes under impact ionization conditions
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference12 articles.
1. Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices,1995
2. Electron-hole pair production and gunn effect in InSb
3. Spatiotemporal chaos in Gunn diodes in presence of impact ionization
4. Phase diagrams for periodically driven Gunn diodes
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1. Simulation investigation of multiple domain observed in In0.23Ga0.77As planar Gunn diode;International Journal of Hydrogen Energy;2016-09
2. High Resolution Parameter-Space from a Two-Level Model on Semi-Insulating GaAs;International Journal of Bifurcation and Chaos;2015-02
3. Lyapunov stability of charge transport in miniband semiconductor superlattices;Physical Review B;2013-10-09
4. Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design;IEEE Transactions on Electron Devices;2012-03
5. Statistical appearance of nonuniform fluctuations in a wide-gap n+–n−–n–n+ device;Solid State Communications;2006-08
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