Modeling of hot-carrier stressed characteristics of submicrometer pMOSFETs-Reference-Cited by-同舟云学术

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Modeling of hot-carrier stressed characteristics of submicrometer pMOSFETs

Published:1996-07 Issue:7 Volume:39 Page:1043-1049
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jang Sheng-Lyang,Tang Tz-Hua,Chen Young-Shying,Sheu Chorng-Jye

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

2. Current-voltage model of short-channel MOSFETs operated in the linear region

3. Modeling of hot-carrier-stressed characteristics of nMOSFETs

4. Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs

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1. Improving the drain-current expression of BSIM4 for hot-carrier degradation modeling that is suitable for analog applications;TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES;2015

2. New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-11-22

3. Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors;Japanese Journal of Applied Physics;2008-08-08

4. A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors;Solid-State Electronics;2004-02

5. A physics-based short-channel current–voltage model for buried-channel MOSFETs;Solid-State Electronics;1999-07

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