A small geometry MOSFET model for CAD applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. An analytical expression for the threshold voltage of a small geometry MOSFET
2. A long-channel MOSFET model
3. A simple model of the threshold voltage of short and narrow channel MOSFETs
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations;Microelectronic Engineering;1997-12
2. A non-quasistatic semi-empirical model for small geometry MOSFETs;Solid-State Electronics;1997-09
3. Unified complete MOSFET model for analysis of digital and analog circuits;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1996
4. Application of the MOS charge-sheet model to nonuniform doping along the channel;Solid-State Electronics;1995-08
5. Static Measurements and Parameter Extraction;The Kluwer International Series in Engineering and Computer Science;1995
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