A simple model of the threshold voltage of short and narrow channel MOSFETs-Reference-Cited by-同舟云学术

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A simple model of the threshold voltage of short and narrow channel MOSFETs

Published:1980-12 Issue:12 Volume:23 Page:1207-1213
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Merckel Gérard

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. IEDM;Poon,1973

2. A simple theory to predict the threshold voltage of short-channel IGFET's

3. IEDM;Noble,1976

4. NATO Course on Process and Device Modeling;Merckel,1977

5. ESSDERC;Profumo,1977

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Compact Models for Integrated Circuit Design;2015-08-14

2. Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold;IEEE Transactions on Electron Devices;2012-06

3. A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain;Microelectronics Reliability;2008-01

4. Physical and geometrical effects on the behaviour of the MOS transistor;Deep-Submicron CMOS ICs;2000

5. SOI CMOS Devices—Basic;CMOS VLSI Engineering;1998

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