Distribution of 1/ƒ noise in an epitaxial GaAs MESFET-Reference-Cited by-同舟云学术

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Distribution of 1/ƒ noise in an epitaxial GaAs MESFET

Published:1986-07 Issue:7 Volume:29 Page:745-749
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hashiguchi S.,Aoki N.,Ohkubo H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Low-Noise Electronic Design;Motchenbacher,1973

2. Physics of Semiconductor Devices;Sze,1981

3. Lattice scattering causes 1/ƒ noise

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of flicker noise in GaAs MESFET's for oscillator applications;IEEE Transactions on Microwave Theory and Techniques;2000

2. The measurement and analysis of noise in GaAsFETs;Solid-State Electronics;1996-02

3. 1/f noise at room temperature in n-type GaAs grown by molecular beam epitaxy;Physica B: Condensed Matter;1991-06

4. Low-frequency noise sources in a Schottky gate field-effect transistor;Radiophysics and Quantum Electronics;1991-02

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