Low-frequency noise sources in a Schottky gate field-effect transistor-Reference-Cited by-同舟云学术

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Low-frequency noise sources in a Schottky gate field-effect transistor

Published:1991-02 Issue:2 Volume:34 Page:168-173
ISSN:0033-8443
Container-title:Radiophysics and Quantum Electronics
language:en
Short-container-title:Radiophys Quantum Electron

Author:

Losev V. L.,Meshcheryakov A. V.,Prigorovskii V. M.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Astronomy and Astrophysics,Nuclear and High Energy Physics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF01045525.pdf

Reference17 articles.

1. Sa,TIIER,52, No. 7, 849 (1964).

2. P. O. Lauritzen,Solid State Electron.,8, No. 1, 45 (1965).

3. M. B. Das and J. M. Moore,IEEE Trans.,ED-21, No. 4, 247 (1974).

4. S. M. Liu and M. B. Das, UGIM-83, Proc. 5th Bien. Gov. Ind. Microelectron. Symp., College Station, Texas, May 25?27, 1983, p. 169.

5. C. Su, H. Rohdin, and C. Stalte, Int. Electron. Dev. Meeting, Washington, DC, December 5?7, 1983, Techn. Dig., p. 601.

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