Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Process Optimization of Radiation-Hardened CMOS Integrated Circuits
2. A Hardened Field Insulator
3. A Radiation-Hard Insulator for MOS LSI Device Isolation
4. Radiation-Induced Defects in SiO2 as Determined with XPS
5. Silicon Monoxide Thin Films
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3. X-ray irradiation of ion-implanted MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-10
4. Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment;Microelectronics Reliability;1998-09
5. Comparison of forming gas, nitrogen, and vacuum anneal effects on X-ray irradiated MOSFETs;IEEE Transactions on Nuclear Science;1995-12
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