Real space transfer: Generalized approach to transport in confined geometries
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. A theory of mobility degradation and enhanced impact ionization due to the gate field in the inversion layer of MOSFET's;Brennan;IEEE Electron Device Lett.,1986
2. Resonant carrier capture by semiconductorquantum wells;Brum;Phys. Rev.,1986
3. Band-gap engineering: from physics and materials to new semiconductor devices;Capasso;Science,1987
4. Lateral transport in superlattices;Hess;Journal de Physique,1981
5. Phenomenological physics of hot carriers in semiconductors;Hess,1980
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