Characterization of electrical properties of semi-insulating GaAs using acousto-electric voltage spectroscopy between 83 and 300 K with surface wave power as an additional parameter-Reference-Cited by-同舟云学术

Characterization of electrical properties of semi-insulating GaAs using acousto-electric voltage spectroscopy between 83 and 300 K with surface wave power as an additional parameter

Published:1988-07 Issue:7 Volume:31 Page:1197-1204
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tabib-Azar M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. GaAs MESFET logic with 4-GHz clock rate

2. LSI processing technology for planar GaAs integrated circuits

3. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits

4. R. Zucca, Inst. Phys. Conf., No. 33b, p. 206

5. Thermal degradation of homoepitaxial GaAs interfaces

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