Hydrogen and nitrogen plasma treatment effects on surface properties of GaSb and InGaAsSb-Reference-Cited by-同舟云学术

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Hydrogen and nitrogen plasma treatment effects on surface properties of GaSb and InGaAsSb

Published:1995-10 Issue:10 Volume:38 Page:1743-1745
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Polyakov A.Y,Milnes A.G,Li Xiaolei,Balmashnov A.A,Smirnov N.B

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Gallium antimonide device related properties

2. Electrical properties of GaSb Schottky diodes and p-n junctions

3. Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95and the influence of hydrogen and sulfur treatments on their properties

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of wet sulfur passivation process on GaSb (100) surface;Integrated Ferroelectrics;2018-01-02

2. Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100);Semiconductors;2017-08

3. Defect formation on the GaSb (001) surface induced by hydrogen atom adsorption;Solid State Communications;2015-06

4. Sulfur Passivation of GaSb(100) Surfaces: Comparison of Aqueous and Alcoholic Sulfide Solutions Using Synchrotron Radiation Photoemission Spectroscopy;The Journal of Physical Chemistry C;2013-07-24

5. The electrical characteristics of Ni/n-GaSb Schottky diode;Materials Science in Semiconductor Processing;2013-04

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