Analytical and experimental characteristics of SiGe heterojunction bipolar transistors with thin α-Si:H emitters-Reference-Cited by-同舟云学术

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Analytical and experimental characteristics of SiGe heterojunction bipolar transistors with thin α-Si:H emitters

Published:1995-10 Issue:10 Volume:38 Page:1829-1834
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tang Z.R,Kamins T,Salama C.A.T

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

2. Proceedings of the European Solid State Device Research Conference;Tang,1994

3. SiGe heterojunction bipolar transistors with thin alpha -Si emitters

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modeling of base transit time for a Si1−yGey heterojunction bipolar transistor;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12

2. Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors;IEEE Transactions on Electron Devices;2003-10

3. Design and simulation of an a-Si:H/GaAs HBT with improved DC and high-frequency characteristics;SPIE Proceedings;2003-04-23

4. Has SiGe lowered the noise in transistors?;IEE Proceedings - Circuits, Devices and Systems;2002-02-01

5. Study of a-Si:H emitters for efficient carrier injection in GaAs bipolar devices;Journal of Non-Crystalline Solids;2000-05

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