A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements-Reference-Cited by-同舟云学术

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A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements

Published:1992-11 Issue:11 Volume:35 Page:1683-1695
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bleichner H.,Bakowski M.,Rosling M.,Nordlander E.,Vobecky J.,Lundqvist M.,Berg S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Specific Negative Resistance in Solids

2. Mesoplasmas and “second breakdown” in silicon junctions

3. Second-breakdown phenomena in avalanching silicon-on-sapphire diodes

4. Second breakdown and damage in junction devices

5. Negative resistance and filamentary currents in avalanching silicon p+-i-n+junctions

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of blow-up theory to thyristor turn-on;IEEE Transactions on Electron Devices;2002

2. Waves of switching in thyristor-like structures;Solid-State Electronics;1999-03

3. Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes;Materials Science Forum;1998-02

4. Applications of bifurcation theory to thyristor turn-on and turn-off;Solid-State Electronics;1997-11

5. Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures;Solid-State Electronics;1997-06

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