Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes-Reference-Cited by-同舟云学术

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Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes

Published:1998-02 Issue: Volume:264-268 Page:1041-1044
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Domeij Martin¹,Breitholtz Bo²,Linnros Jan²,Östling Mikael³

Affiliation:

1. TranSiC AB

2. KTH, Royal Institute of Technology

3. KTH Royal Institute of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.1041.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Avalanche Limit and Current Filamentation Onset Limit in 4H-Silicon Carbide High-Voltage Diodes;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021

2. SiC Technology;VLSI Technology;2003-03-19

3. A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages;Materials Science Forum;2000-05

4. Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes;Materials Science Forum;2000-05

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