A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference54 articles.
1. An improved approach to the Shockley–Read–Hall recombination in inhomogeneous fields of space‐charge regions
2. Non-ideal base current in bipolar transistors at low temperatures
3. Forward-bias tunneling: A limitation to bipolar device scaling
4. Electric field effect on the thermal emission of traps in semiconductor junctions
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