Geometry effects on the GaAs bipolar-unipolar negative differential resistance transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio
2. Variable N-type negative resistance in an injection-gated double-injection diode
3. Negative-resistance field-effect transistor grown by organometallic chemical vapor deposition
4. Quantum well tunnel triode
5. Bipolar transistor with graded band-gap base
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor;Japanese Journal of Applied Physics;1990-12-20
2. Characterization of a GaAs current‐controlled bipolar‐unipolar transition negative differential resistance transistor;Applied Physics Letters;1990-08-20
3. Novel GaAs current-injection negative differential resistance transistor;Journal of Materials Science: Materials in Electronics;1990-08
4. A novel GaAs current-controlled bipolar-unipolar transition negative differential resistance transistor prepared by molecular-beam epitaxy;Philosophical Magazine Letters;1990-06
5. Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy;Applied Physics A Solids and Surfaces;1990-05
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