Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
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Published:1990-12-20
Issue:Part 2, No. 12
Volume:29
Page:L2411-L2413
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yarn Kao-Feng,Chang Chun-Yen,Wang Yeong-Her,Wang Ruey-Lue
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering