Constant-capacitance deep-level optical spectroscopy-Reference-Cited by-同舟云学术

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Constant-capacitance deep-level optical spectroscopy

Published:1989-04 Issue:4 Volume:32 Page:287-293
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Vilanova J.,Dueñas S.,Rubio E.,Bailón L.,Barbolla J.,Lora-Tamayo E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Trap Levels in Gallium Arsenide

2. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

3. Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and Concentration

4. Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections

5. Photocapacitance effects of deep traps in epitaxial GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs;Microelectronics Reliability;2016-01

2. Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies;Journal of Applied Physics;2013-05-28

3. Admittance spectroscopy in junctions;Solid-State Electronics;1992-03

4. Optical capture cross sections of palladium in silicon;Journal of Applied Physics;1991-01

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