‘Modulation effect by intense hole injection’ in epitaxial silicon Schottky-barrier-diodes

Author:

Jäger H.,Kosak W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Static characteristics of high-barrier Schottky diode under high injection level;Solid-State Electronics;1999-09

2. Schottky Contacts on Silicon;Springer Series in Electronics and Photonics;1994

3. Inductive reactances and excess capacitances at WNx/n-GaAs Schottky gate contacts;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-09

4. Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes;NATO ASI Series;1989

5. Schottky barrier and pn-junctionI/V plots ? Small signal evaluation;Applied Physics A Solids and Surfaces;1988-11

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