Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes-Reference-Cited by-同舟云学术

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Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes

Published:1989 Issue: Volume: Page:235-256
ISSN:0258-1221
Container-title:NATO ASI Series
language:
Short-container-title:

Author:

Werner Jürgen H.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4613-0795-2_14.pdf

Reference43 articles.

1. W. Schottky, Naturwissenschaften 26, 843 (1938) and W. Schottky H8, 539 (1942)

2. J. Bardeen, Phys. Rev. 71, 717 (1947)

3. V.Heine, Phys. Rev. A 138, 1689 (1965)

4. C. Tejedor, F. Flores, and E. Louis, J. Phys. C 10, 2163 (1977)

5. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. About the determination of the Schottky barrier height with the C-V method;Journal of Applied Physics;2011-04

2. Electrical properties of polypyrrole/p-InP structure;Journal of Polymer Science Part B: Polymer Physics;2006

3. The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy;Vacuum;2004-05

4. I-V-T measurements on GaAs/AlGaAs heterojunctions interpreted on the basis of thermally assisted tunneling;The European Physical Journal Applied Physics;2000-02

5. On the Forward Bias Excess Capacitance at Intimate and MIS Schottky Barrier Diodes with Perfect or Imperfect Ohmic Back Contact;Physica Scripta;2000-02-01

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