On the Forward Bias Excess Capacitance at Intimate and MIS Schottky Barrier Diodes with Perfect or Imperfect Ohmic Back Contact
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/61/i=2/a=011/pdf
Reference21 articles.
1. Origin of the Excess Capacitance at Intimate Schottky Contacts
2. Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts
3. Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes
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