High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance-Reference-Cited by-同舟云学术

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High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

Published:1994-04 Issue:4-6 Volume:37 Page:949-952
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Engelhardt C.M.,Többen D.,Aschauer M.,Schäffler F.,Abstreiter G.,Gornik E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electronic properties of two-dimensional systems

2. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

3. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

4. Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

5. Modulation doping in GexSi1−x/Si strained layer heterostructures

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2;Applied Surface Science;2022-07

2. Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations;Scientific Reports;2022-02-25

3. Vanishing Zeeman energy in a two-dimensional hole gas;Physical Review B;2020-09-17

4. Spin-orbit coupling effects in the quantum Hall regime probed by electron spin resonance;Physical Review B;2018-12-14

5. n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer;IEEE Electron Device Letters;2017-06

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