Space charge analysis of Si n+-i structures with application to far-infrared detectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Interfacial work functions and extrinsic silicon infrared photocathodes
2. Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes
3. Far Infrared Detection with a Si p-i Interface and Multilayer Structures
4. Homojunction internal photoemission far‐infrared detectors: Photoresponse performance analysis
5. Dark current analysis of Si homojunction interfacial work function internal photoemission far‐infrared detectors
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3. Study of band gap narrowing effect in n-GaAs for the application of far-infrared detection;Physica B: Condensed Matter;2002-11
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