Dark current analysis of Si homojunction interfacial work function internal photoemission far‐infrared detectors-Reference-Cited by-同舟云学术

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Dark current analysis of Si homojunction interfacial work function internal photoemission far‐infrared detectors

Published:1995-04-24 Issue:17 Volume:66 Page:2262-2264
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuan H. X.,Perera A. G. U.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113186

Reference12 articles.

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of the high-performance THz GaAs homojunction detector below the frequency of Reststrahlen band;Applied Physics Letters;2018-12-10

2. Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector;Applied Physics Letters;2016-05-16

3. Optimization and performance of p-GaAs homojunction THz detectors;J INFRARED MILLIM W;2015

4. Microcavity Silicon Photodetectors at 1.55 μm;Advances in OptoElectronics;2011-12-19

5. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives;Sensors;2010-11-29

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