Analysis of quantum wire high electron mobility transistor (HEMT) structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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2. Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field;SPIE Proceedings;2016-12-30
3. Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance;International Journal of Modeling, Simulation, and Scientific Computing;2016-08-23
4. A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2012-03-02
5. Scattering of electrons in the GaAs/AlAs transistor structure;Physics of the Solid State;2007-05
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