A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHz
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. A Proposed High-Frequency, Negative-Resistance Diode
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3. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis;Journal of Semiconductors;2015-06
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