Spectroscopy of impurity levels by measuring the microplasma turn on probabilities in GaP/Zn,O/diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Luminescence and doping characteristics of liquid encapsulation Czochralski grown GaP(Zn, O)
2. Deep hole traps in n‐type liquid encapsulated Czochralski GaP
3. Determination of deep centers in silicon by thermally stimulated conductivity measurements
4. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
5. Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers
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1. Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes;Semiconductors;2018-07-06
2. A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum;Semiconductors;2017-03
3. Study of deep centers in microplasma channels of silicon epitaxial avalanche diodes;Semiconductors;2009-07
4. Statistical delay of microplasma breakdown in GaP p-n junctions;Semiconductors;1999-11
5. Influence of traps on avalanche triggering during breakdown of gallium phosphide p-n junctions;Technical Physics Letters;1999-03
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