Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors-Reference-Cited by-同舟云学术

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Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors

Published:1979-04 Issue:4 Volume:22 Page:373-378
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brown W.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. MNOS LSI memory device data retention measurements and projections

2. Discharge of MNOS structures

3. Proc. 10th Reliability Physics Meeting;Woods,1972

4. Proc. 10th Reliability Physics Meeting;Woods,1972

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1. Study of Polycrystalline and Amorphous LPCVD Silicon Films by Atomic Force Microscopy;Surface and Interface Analysis;1997-06

2. A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy;Journal of Applied Physics;1997-05-15

3. Thin Film Deposition;Fundamentals of Semiconductor Processing Technology;1995

4. MNOS memory technology with oxynitride thin films;IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A;1994

5. Effects of polysilicon gate on characteristics of ONO capacitors;Materials Chemistry and Physics;1992-05

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