Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: Phosphorus in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference58 articles.
1. Ion Implantation in Semiconductors;Mayer,1970
2. Computer calculations of sheet resistance of n- and p-type implantations in silicon
3. Ion Implantation;Dearnaley,1973
4. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
5. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment;Solid-State Electronics;1983-12
2. Numerical analysis of the sheet resistance of ion-implanted phosphorus layers in silicon;Solid-State Electronics;1983-09
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