Temperature dependent threshold behavior of depletion mode MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Very small MOSFET's for low-temperature operation
2. Semiconductors;Wolf,1971
3. Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements
4. Effective mass and intrinsic concentration in silicon
5. Temperature dependence of the band gap of silicon
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