One-dimensional device model of the npn bipolar transistor including heavy doping effects under fermi statistics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. The emitter efficiency of bipolar transistors
2. The influence of heavy doping on the emitter efficiency of a bipolar transistor
3. The temperature dependence of ideal gain in double diffused silicon transistors
4. Investigation of current-gain temperature dependence in silicon transistors
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5. ALGORITHM FOR MODELLING GENERALLY DESCRIBED SEMICONDUCTORS;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1991-04
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