Equivalent analytical solution for the minority carrier transport in doped silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Comment on “Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations” [J. Appl. Phys. 115, 094501 (2014)];Journal of Applied Physics;2015-01-14
2. Multi-region solar cell modeling;Solar Energy Materials and Solar Cells;1997-04
3. Energy band structure parameters and their data, derived from the measurements of minority carrier current density in heavily doped emitters of silicon devices;Solar Energy Materials and Solar Cells;1997-02
4. New analytical expressions for dark current calculations of highly doped regions in semiconductor devices;IEEE Transactions on Electron Devices;1997
5. Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices;Physica Status Solidi (a);1996-06-16
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