On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation-Reference-Cited by-同舟云学术

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On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation

Published:1973-09 Issue:9 Volume:16 Page:1047-1053
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lehovec Kurt,Seeley W.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Determination of Laplace-Poisson domain interface

2. Computer Aided Two-dimensional Analysis of the Junction Field-effect Transistor

3. General theory for pinched operation of the junction-gate FET

4. Excess gate current in a junction-gate field-effect transistor

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1. Analytical model for the double-gate JFET applied to SiC power JFETs;International Journal of Modelling and Simulation;2020-08-23

2. Horizontal HALL devices: A lumped-circuit model for EDA simulators;Sensors and Actuators A: Physical;2008-07

3. GaAs MESFET model for circuit simulation;International Journal of Electronics;1989-03

4. Generalized gradual channel modeling of field-effect transistors;IEEE Transactions on Electron Devices;1988

5. JFETs and MESFETs — Field Effect Transistors;Semiconductor Devices and Integrated Electronics;1980

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